Product Overview
| Property | Value |
|---|
| Product Name | Oxygen O2 |
| CAS Number | 7782-44-7 |
| UN Number | UN 1072 |
| Packing | 40L, 47L, 50L cylinder (GB, ISO, DOT) |
| Filling Content | 5-6m³/cyl |
| Shipped as | Compressed Gas |
Specifications
| Items | Grade 1 | Grade 2 | Grade 3 |
|---|
| O2 | 100.00% | 100.00% | 100.00% |
| Ar | ≤3.0 ppmv | ≤3.0 ppmv | ≤1.0 ppmv |
| N2 | ≤25.0 ppmv | ≤5.0 ppmv | ≤1.0 ppmv |
| CO2 | ≤0.5 ppmv | ≤0.1 ppmv | ≤0.1 ppmv |
| CO | ≤0.5 ppmv | ≤0.1 ppmv | ≤0.1 ppmv |
| THC (CH4) | ≤0.5 ppmv | ≤0.1 ppmv | ≤0.1 ppmv |
| H2O | ≤2.0 ppmv | ≤0.5 ppmv | ≤0.1 ppmv |
| H2 | ≤1.0 ppmv | ≤0.1 ppmv | ≤0.1 ppmv |
Transportation & Technical Information
| DOT Classification | 2.2 - Non-flammable Gas |
| CGA/DISS/JIS/BS341/DIN477 | 540/714/W22-14R/NO.3/NO.9 |
| Molecular Weight | 31.999 g/mol |
| Specific Gravity (air=1) | 1.105 |
| Critical Temperature | -118.57 °C |
Applications
As a component in calibration gas. In first-aid treatment of emergencies such as suffocation and heart attack. In the treatment of patients with respiratory disorders. In anaesthesia. In chemical oxidation reaction studies. In semiconductor fabrication: chemical vapour deposition of silicon dioxide, thermal oxide growth, plasma etching, plasma stripping of photoresist, and carrier gas in certain deposition/diffusion operations.
